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IRGSL30B60KPBF Технические параметры

Infineon Technologies  IRGSL30B60KPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 11 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Weight 2.084002g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 370W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 370W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 78A
Turn On Time 74 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 30A
Turn Off Time-Nom (toff) 237 ns
IGBT Type NPT
Gate Charge 102nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 46ns/185ns
Switching Energy 350μJ (on), 825μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 42ns
Height 9.652mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
RoHS Status RoHS Compliant

IRGSL30B60KPBF Документы

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