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Infineon Technologies IRL1104PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB | |
| Current - Continuous Drain (Id) @ 25℃ | 104A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Power Dissipation (Max) | 167W Tc | |
| Turn Off Delay Time | 32 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Termination | Through Hole | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 40V | |
| Current Rating | 104A | |
| Element Configuration | Single | |
| Power Dissipation | 167W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Turn On Delay Time | 18 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3445pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 4.5V | |
| Rise Time | 257ns | |
| Drain to Source Voltage (Vdss) | 40V | |
| Vgs (Max) | ±16V | |
| Fall Time (Typ) | 64 ns | |
| Continuous Drain Current (ID) | 104A | |
| Gate to Source Voltage (Vgs) | 16V | |
| Drain to Source Breakdown Voltage | 40V | |
| Dual Supply Voltage | 40V | |
| Input Capacitance | 3.445nF | |
| Recovery Time | 126 ns | |
| Drain to Source Resistance | 12mOhm | |
| Rds On Max | 8 mΩ | |
| Nominal Vgs | 1 V | |
| Height | 8.77mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |