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IRL1104PBF Технические параметры

Infineon Technologies  IRL1104PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25℃ 104A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 167W Tc
Turn Off Delay Time 32 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Current Rating 104A
Element Configuration Single
Power Dissipation 167W
Свойство продукта Значение свойства
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3445pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 4.5V
Rise Time 257ns
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±16V
Fall Time (Typ) 64 ns
Continuous Drain Current (ID) 104A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Dual Supply Voltage 40V
Input Capacitance 3.445nF
Recovery Time 126 ns
Drain to Source Resistance 12mOhm
Rds On Max 8 mΩ
Nominal Vgs 1 V
Height 8.77mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

IRL1104PBF Документы

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