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IRL2203NLPBF Технические параметры

Infineon Technologies  IRL2203NLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Supplier Device Package TO-262
Current - Continuous Drain (Id) @ 25℃ 116A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 180W Tc
Turn Off Delay Time 23 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Свойство продукта Значение свойства
Current Rating 116A
Power Dissipation 170W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Rise Time 160ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±16V
Fall Time (Typ) 66 ns
Continuous Drain Current (ID) 116A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Input Capacitance 3.29nF
Drain to Source Resistance 10mOhm
Rds On Max 7 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRL2203NLPBF Документы

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