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IRL2203NPBF Технические параметры

Infineon Technologies  IRL2203NPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 116A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 180W Tc
Turn Off Delay Time 23 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2001
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 7MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 30V
Current Rating 116A
Lead Pitch 2.54mm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 130W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Rise Time 160ns
Vgs (Max) ±16V
Fall Time (Typ) 66 ns
Continuous Drain Current (ID) 116A
Threshold Voltage 1V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 290 mJ
Recovery Time 84 ns
Nominal Vgs 1 V
Height 15.24mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRL2203NPBF Документы

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