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IRL3303LPBF Технические параметры

Infineon Technologies  IRL3303LPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Current - Continuous Drain (Id) @ 25℃ 38A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 3.8W Ta 68W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Свойство продукта Значение свойства
Current Rating 38A
Power Dissipation 68W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 200ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±16V
Continuous Drain Current (ID) 38A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Input Capacitance 870pF
Drain to Source Resistance 40mOhm
Rds On Max 26 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free

IRL3303LPBF Документы

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