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IRL3705NPBF Технические параметры

Infineon Technologies  IRL3705NPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 89A Tc
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Number of Elements 1 Element
Power Dissipation (Max) 170W Tc
Turn Off Delay Time 37 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 12mOhm
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Voltage - Rated DC 55V
Current Rating 89A
Lead Pitch 2.54mm
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 5V
Rise Time 140ns
Vgs (Max) ±16V
Fall Time (Typ) 78 ns
Continuous Drain Current (ID) 89A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 77A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 140 ns
Nominal Vgs 2 V
Height 8.77mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRL3705NPBF Документы

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