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IRL3705NSTRLPBF Технические параметры

Infineon Technologies  IRL3705NSTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 89A Tc
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 170W Tc
Turn Off Delay Time 37 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 10mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 55V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 89A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 170W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 5V
Rise Time 140ns
Vgs (Max) ±16V
Fall Time (Typ) 78 ns
Continuous Drain Current (ID) 89A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Recovery Time 140 ns
Nominal Vgs 2 V
Height 4.699mm
Length 10.668mm
Width 10.16mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRL3705NSTRLPBF Документы

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