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IRL3716PBF Технические параметры

Infineon Technologies  IRL3716PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25℃ 180A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 210W Tc
Turn Off Delay Time 38 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4Ohm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Current Rating 180A
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 210W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5090pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 79nC @ 4.5V
Rise Time 140ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 5.09nF
Drain to Source Resistance 4.8mOhm
Rds On Max 4 mΩ
Nominal Vgs 3 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

IRL3716PBF Документы

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