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IRL6342PBF Технические параметры

Infineon Technologies  IRL6342PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9.9A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 33 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2003
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
Terminal Form GULL WING
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2.5W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.6m Ω @ 9.9A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 1025pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 12ns
Vgs (Max) ±12V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 9.9A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 79A
Recovery Time 20 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.1 V
Height 1.75mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

IRL6342PBF Документы

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