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IRL6372PBF Технические параметры

Infineon Technologies  IRL6372PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 34 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2011
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 17.9MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRL6372PBF
Qualification Status Not Qualified
Element Configuration Dual
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5.9 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.9m Ω @ 8.1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 8.1A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 65A
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 20 ns
FET Feature Logic Level Gate
Nominal Vgs 1.1 V
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRL6372PBF Документы

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