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Infineon Technologies IRLB8314PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 130A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Power Dissipation (Max) | 125W Tc | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2014 | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 2.4m Ω @ 68A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 100μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5050pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 130A | |
| Threshold Voltage | 1.7V | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant |