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IRLB8721PBF Технические параметры

Infineon Technologies  IRLB8721PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 62A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 65W Tc
Turn Off Delay Time 9 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 8.7mOhm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 65W
Case Connection DRAIN
Свойство продукта Значение свойства
Turn On Delay Time 9.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.7m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1077pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 93ns
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 62A
Threshold Voltage 1.8V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 250A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 98 mJ
Recovery Time 24 ns
Nominal Vgs 1.8 V
Height 9.02mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRLB8721PBF Документы

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