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IRLB8743PBF Технические параметры

Infineon Technologies  IRLB8743PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 78A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 140W Tc
Turn Off Delay Time 25 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 8.7MOhm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Свойство продукта Значение свойства
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5110pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V
Rise Time 92ns
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 150A
Threshold Voltage 1.8V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 78A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 620A
Dual Supply Voltage 30V
Recovery Time 44 ns
Nominal Vgs 1.8 V
Height 9.02mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRLB8743PBF Документы

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