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IRLB8748PBF Технические параметры

Infineon Technologies  IRLB8748PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 78A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 75W Tc
Turn Off Delay Time 16 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 4.8MOhm
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2139pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Rise Time 96ns
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Continuous Drain Current (ID) 92A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 78A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 35 ns
Nominal Vgs 1.8 V
Height 16.51mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRLB8748PBF Документы

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