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IRLHS6376TR2PBF Технические параметры

Infineon Technologies  IRLHS6376TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6Pins
Supplier Device Package 6-PQFN (2x2)
Current - Continuous Drain (Id) @ 25℃ 3.6A
Turn Off Delay Time 11 ns
Packaging Cut Tape (CT)
Series HEXFET®
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 63MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.5W
Base Part Number IRLHS6376
Element Configuration Dual
Power Dissipation 6.6W
Turn On Delay Time 4.4 ns
Power - Max 1.5W
FET Type 2 N-Channel (Dual)
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 63mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 9.4 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Input Capacitance 270pF
Recovery Time 12 ns
FET Feature Logic Level Gate
Drain to Source Resistance 63mOhm
Rds On Max 63 mΩ
Nominal Vgs 800 mV
Height 950μm
Length 2.1mm
Width 2.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRLHS6376TR2PBF Документы

IRLHS6376TR2PBF brand manufacturers: Infineon Technologies, Anli stock, IRLHS6376TR2PBF reference price.Infineon Technologies. IRLHS6376TR2PBF parameters, IRLHS6376TR2PBF Datasheet PDF and pin diagram description download.You can use the IRLHS6376TR2PBF Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IRLHS6376TR2PBF pin diagram and circuit diagram and usage method of function,IRLHS6376TR2PBF electronics tutorials.You can download from the Anli.