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IRLI540NPBF Технические параметры

Infineon Technologies  IRLI540NPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 23A Tc
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Number of Elements 1 Element
Power Dissipation (Max) 54W Tc
Turn Off Delay Time 39 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1998
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 53mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 100V
Current Rating 20A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Свойство продукта Значение свойства
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Rise Time 81ns
Vgs (Max) ±16V
Fall Time (Typ) 62 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 290 ns
Isolation Voltage 2kV
Nominal Vgs 2 V
Height 9.8mm
Length 10.6mm
Width 4.8mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRLI540NPBF Документы

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