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Infineon Technologies IRLL024NTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Manufacturer Package Identifier | IRLL024NTRPBF | |
| Current - Continuous Drain (Id) @ 25℃ | 3.1A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1W Ta | |
| Turn Off Delay Time | 18 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 1999 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 65mOhm | |
| Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE | |
| Voltage - Rated DC | 55V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Current Rating | 3.1A | |
| JESD-30 Code | R-PDSO-G4 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.1W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 7.4 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 3.1A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 15.6nC @ 5V | |
| Rise Time | 21ns | |
| Vgs (Max) | ±16V | |
| Fall Time (Typ) | 25 ns | |
| Continuous Drain Current (ID) | 3.1A | |
| Threshold Voltage | 2V | |
| Gate to Source Voltage (Vgs) | 16V | |
| Drain to Source Breakdown Voltage | 55V | |
| Dual Supply Voltage | 55V | |
| Recovery Time | 58 ns | |
| Max Junction Temperature (Tj) | 150°C | |
| Nominal Vgs | 2 V | |
| Height | 1.8mm | |
| Length | 6.6802mm | |
| Width | 3.7mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead, Lead Free |