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IRLL2703TRPBF Технические параметры

Infineon Technologies  IRLL2703TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.9A Ta
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta
Turn Off Delay Time 6.9 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1999
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Resistance 60mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Voltage - Rated DC 30V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 3.9A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Rise Time 24ns
Vgs (Max) ±16V
Forward Voltage 1V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 16A
Avalanche Energy Rating (Eas) 180 mJ
Height 1.4478mm
Length 6.6802mm
Width 3.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IRLL2703TRPBF Документы

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