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IRLL2705PBF Технические параметры

Infineon Technologies  IRLL2705PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.8A Ta
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 1997
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 5.2A
Drain-source On Resistance-Max 0.051Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 110 mJ
RoHS Status ROHS3 Compliant
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IRLL2705PBF Документы

IRLL2705PBF brand manufacturers: Infineon Technologies, Anli stock, IRLL2705PBF reference price.Infineon Technologies. IRLL2705PBF parameters, IRLL2705PBF Datasheet PDF and pin diagram description download.You can use the IRLL2705PBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRLL2705PBF pin diagram and circuit diagram and usage method of function,IRLL2705PBF electronics tutorials.You can download from the Anli.