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IRLL2705TR Технические параметры

Infineon Technologies  IRLL2705TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.8A Ta
Number of Elements 1 Element
Packaging Cut Tape (CT)
Series HEXFET®
Published 1999
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drain Current-Max (Abs) (ID) 5.2A
Drain-source On Resistance-Max 0.051Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 110 mJ
RoHS Status Non-RoHS Compliant

IRLL2705TR Документы

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