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IRLML0100TRPBF Технические параметры

Infineon Technologies  IRLML0100TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.6A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Turn Off Delay Time 9 ns
Power Dissipation (Max) 1.3W Ta
Number of Elements 1 Element
Published 1997
Series HEXFET®
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 220MOhm
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Свойство продукта Значение свойства
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 2.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time 2.1ns
Vgs (Max) ±16V
Fall Time (Typ) 3.6 ns
Continuous Drain Current (ID) 1.6A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 7A
Recovery Time 30 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2.5 V
Height 1.12mm
Length 3.0226mm
Width 1.397mm
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Lead Free Lead Free

IRLML0100TRPBF Документы

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