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IRLML6302TR Технические параметры

Infineon Technologies  IRLML6302TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Current - Continuous Drain (Id) @ 25℃ 780mA Ta
Number of Elements 1 Element
Packaging Cut Tape (CT)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Max Power Dissipation 540mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -620mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 540mW
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 610mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 97pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.45V
Rise Time 22ns
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 780mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.78A
Drain-source On Resistance-Max 0.6Ohm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

IRLML6302TR Документы

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