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IRLR3717PBF Технические параметры

Infineon Technologies  IRLR3717PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 89W Tc
Turn Off Delay Time 5.8 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 4MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 20V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 120A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Rise Time 14ns
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 2V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 460A
Avalanche Energy Rating (Eas) 460 mJ
Recovery Time 33 ns
Height 2.26mm
Length 6.7056mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRLR3717PBF Документы

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