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IRLR3802PBF Технические параметры

Infineon Technologies  IRLR3802PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 84A Tc
Drive Voltage (Max Rds On, Min Rds On) 2.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 88W Tc
Turn Off Delay Time 21 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 8.5mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 12V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 84A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2490pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V
Rise Time 14ns
Vgs (Max) ±12V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 84A
Threshold Voltage 1.9V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 12V
Dual Supply Voltage 12V
Nominal Vgs 1.9 V
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRLR3802PBF Документы

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