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IRLR8113PBF Технические параметры

Infineon Technologies  IRLR8113PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Supplier Device Package D-Pak
Current - Continuous Drain (Id) @ 25℃ 94A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 89W Tc
Turn Off Delay Time 15 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Current Rating 94A
Element Configuration Single
Power Dissipation 89W
Свойство продукта Значение свойства
Turn On Delay Time 9.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2920pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V
Rise Time 3.8ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 94A
Threshold Voltage 2.25V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.92nF
Recovery Time 49 ns
Drain to Source Resistance 7.4mOhm
Rds On Max 6 mΩ
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRLR8113PBF Документы

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