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IRLR8256TRPBF Технические параметры

Infineon Technologies  IRLR8256TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 81A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 63W Tc
Turn Off Delay Time 12 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 63W
Case Connection DRAIN
Turn On Delay Time 9.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 46ns
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Continuous Drain Current (ID) 81A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 86 mJ
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

IRLR8256TRPBF Документы

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