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IRLR8259TRPBF Технические параметры

Infineon Technologies  IRLR8259TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 57A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 48W Tc
Turn Off Delay Time 9.1 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 8.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.7m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 38ns
Vgs (Max) ±20V
Fall Time (Typ) 8.9 ns
Continuous Drain Current (ID) 57A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 42A
Drain-source On Resistance-Max 0.0087Ohm
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 67 mJ
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

IRLR8259TRPBF Документы

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