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IRLR8503PBF Технические параметры

Infineon Technologies  IRLR8503PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Supplier Device Package D-Pak
Current - Continuous Drain (Id) @ 25℃ 44A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 62W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 16mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Свойство продукта Значение свойства
Current Rating 44A
Power Dissipation 62W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 18ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Continuous Drain Current (ID) 44A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 1.65nF
Rds On Max 16 mΩ
Nominal Vgs 1 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

IRLR8503PBF Документы

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