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IRLSL3034PBF Технические параметры

Infineon Technologies  IRLSL3034PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Supplier Device Package TO-262
Current - Continuous Drain (Id) @ 25℃ 195A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 375W Tc
Turn Off Delay Time 97 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Element Configuration Single
Power Dissipation 375W
Свойство продукта Значение свойства
Turn On Delay Time 65 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10315pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 162nC @ 4.5V
Rise Time 827ns
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Fall Time (Typ) 355 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 10.315nF
Drain to Source Resistance 1.7mOhm
Rds On Max 1.7 mΩ
Height 9.65mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
RoHS Status RoHS Compliant

IRLSL3034PBF Документы

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