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IRLU3103PBF Технические параметры

Infineon Technologies  IRLU3103PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 55A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 107W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 19mOhm
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Voltage - Rated DC 30V
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 55A
Time@Peak Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Rise Time 210ns
Vgs (Max) ±16V
Fall Time (Typ) 54 ns
Continuous Drain Current (ID) 55A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 240 mJ
Recovery Time 120 ns
Nominal Vgs 1 V
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRLU3103PBF Документы

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