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IRLU3110ZPBF Технические параметры

Infineon Technologies  IRLU3110ZPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 42A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 140W Tc
Turn Off Delay Time 33 ns
Number of Elements 1 Element
Packaging Tube
Series HEXFET®
Published 2006
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Rise Time 110ns
Vgs (Max) ±16V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 250A
Dual Supply Voltage 100V
Nominal Vgs 2.5 V
Height 6.1mm
Length 6.6mm
Width 2.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRLU3110ZPBF Документы

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