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IRLU3717PBF Технические параметры

Infineon Technologies  IRLU3717PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mount Through Hole
Number of Pins 3Pins
Supplier Device Package I-PAK
Power Dissipation (Max) 89W Tc
Turn Off Delay Time 5.8 ns
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4.2MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Current Rating 120A
Power Dissipation 89W
Turn On Delay Time 14 ns
FET Type N-Channel
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 2.83nF
Recovery Time 33 ns
Drain to Source Resistance 5.7mOhm
Rds On Max 4 mΩ
Nominal Vgs 2 V
Width 2.3mm
Length 6.6mm
Height 6.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRLU3717PBF Документы

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