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IRLZ24NPBF Технические параметры

Infineon Technologies  IRLZ24NPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount PCB, Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Number of Elements 1 Element
Power Dissipation (Max) 45W Tc
Current - Continuous Drain (Id) @ 25℃ 18A Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2002
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 60mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 55V
Peak Reflow Temperature (Cel) 250
Current Rating 17A
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Lead Pitch 2.54mm
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Case Connection DRAIN
Turn On Delay Time 7.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Rise Time 74ns
Vgs (Max) ±16V
Fall Time (Typ) 29 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 72A
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 68 mJ
Recovery Time 90 ns
Nominal Vgs 2 V
Height 15.24mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRLZ24NPBF Документы

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