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IRLZ24NS Технические параметры

Infineon Technologies  IRLZ24NS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 18A Tc
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 45W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1998
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 18A
Drain-source On Resistance-Max 0.075Ohm
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 68 mJ
RoHS Status Non-RoHS Compliant
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IRLZ24NS Документы

IRLZ24NS brand manufacturers: Infineon Technologies, Anli stock, IRLZ24NS reference price.Infineon Technologies. IRLZ24NS parameters, IRLZ24NS Datasheet PDF and pin diagram description download.You can use the IRLZ24NS Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRLZ24NS pin diagram and circuit diagram and usage method of function,IRLZ24NS electronics tutorials.You can download from the Anli.