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ITD50N04S4L07ATMA1 Технические параметры
Infineon Technologies ITD50N04S4L07ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 1 Week | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD | |
| Surface Mount | YES | |
| Supplier Device Package | PG-TO252-5-311 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Infineon Technologies | |
| Package | Bulk | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 50A (Tc) | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | ITD50N04S4L07ATMA1 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.73 | |
| Drain Current-Max (ID) | 50 A | |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PSSO-G4 | |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Power - Max | 46W (Tc) | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 18μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2480pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | |
| Drain to Source Voltage (Vdss) | 40V | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252 | |
| Drain-source On Resistance-Max | 0.0072 Ω | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| DS Breakdown Voltage-Min | 40 V | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate |
ITD50N04S4L07ATMA1 Документы
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