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Infineon Technologies P2000DL45X168HPSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Mounting Type | Chassis Mount | |
| Package / Case | TO-200AF | |
| Supplier Device Package | BG-P16826K-1 | |
| Mfr | Infineon Technologies | |
| Package | Tray | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 2000 A | |
| Base Product Number | P2000D | |
| Collector-Emitter Saturation Voltage | 2.25V | |
| Maximum Gate Emitter Voltage | 20 V | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Continuous Collector Current at 25 C | 2000 A | |
| Mounting Styles | Cable Mount | |
| Part # Aliases | P2000DL45X168 SP005729091 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies |
| Свойство продукта | Значение свойства | |
|---|---|---|
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 4500 V | |
| Series | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Packaging | Tray | |
| Subcategory | IGBTs | |
| Configuration | Single | |
| Power Dissipation | - | |
| Input | Standard | |
| Product Type | IGBT Modules | |
| Current - Collector Cutoff (Max) | 200 μA | |
| Voltage - Collector Emitter Breakdown (Max) | 4500 V | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 2000A | |
| Continuous Collector Current | 2kA | |
| IGBT Type | Trench | |
| NTC Thermistor | No | |
| Input Capacitance (Cies) @ Vce | 420 nF @ 25 V | |
| Product | IGBT Silicon Modules | |
| Product Category | IGBT Modules |