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PTAB182002TCV2R250XUMA1 Технические параметры
Infineon Technologies PTAB182002TCV2R250XUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 26 Weeks | |
| Mount | Surface Mount | |
| Number of Pins | 4Pins | |
| Number of Elements | 2 Elements | |
| Packaging | Tape & Reel (TR) | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 200°C | |
| Min Operating Temperature | -40°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Gate to Source Voltage (Vgs) | 10V | |
| DS Breakdown Voltage-Min | 65V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L B | |
| RoHS Status | ROHS3 Compliant |
PTAB182002TCV2R250XUMA1 Документы
- Other Related DocumentsPart Number Guide
- DatasheetsPTAB182002TC
- ConflictMineralStatementInfineon-company-51.pdf
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