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SGP07N120XKSA1 Технические параметры

Infineon Technologies  SGP07N120XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 800V, 8A, 47 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 125W
Pin Count 3
JESD-30 Code R-PSFM-T3
Свойство продукта Значение свойства
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 16.5A
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 56 ns
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 8A
Turn Off Time-Nom (toff) 520 ns
IGBT Type NPT
Gate Charge 70nC
Current - Collector Pulsed (Icm) 27A
Td (on/off) @ 25°C 27ns/440ns
Switching Energy 1mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

SGP07N120XKSA1 Документы

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