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SKB04N60ATMA1 Технические параметры

Infineon Technologies  SKB04N60ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 4A, 67 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 50W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 50W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 9.4A
Reverse Recovery Time 180 ns
Turn On Time 38 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 4A
Turn Off Time-Nom (toff) 368 ns
IGBT Type NPT
Gate Charge 24nC
Current - Collector Pulsed (Icm) 19A
Td (on/off) @ 25°C 22ns/237ns
Switching Energy 131μJ
RoHS Status RoHS Compliant

SKB04N60ATMA1 Документы

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