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SMBT3904UPNE3627 Технические параметры

Infineon Technologies  SMBT3904UPNE3627 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package PG-SC74-6
Mfr Infineon Technologies
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 200mA
Свойство продукта Значение свойства
Series -
Operating Temperature 150°C (TJ)
Power - Max 330mW
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Current - Collector Cutoff (Max) 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Frequency - Transition 250MHz
SMBT3904UPNE3627 brand manufacturers: Infineon Technologies, Anli stock, SMBT3904UPNE3627 reference price.Infineon Technologies. SMBT3904UPNE3627 parameters, SMBT3904UPNE3627 Datasheet PDF and pin diagram description download.You can use the SMBT3904UPNE3627 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find SMBT3904UPNE3627 pin diagram and circuit diagram and usage method of function,SMBT3904UPNE3627 electronics tutorials.You can download from the Anli.