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Infineon Technologies TDB6HK180N16RRBPSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Thyristors - SCRs - Modules | |
Марка | ||
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Mfr | Infineon Technologies | |
Package | Tray | |
Product Status | Active | |
Number of SCRs/Diodes | 3 SCRs, 3 DiodesSCRs/Diode | |
Voltage-Off State | 1.6 kV | |
Base Product Number | TDB6HK | |
Vr - Reverse Voltage | 1600 V | |
Maximum Operating Temperature | + 175 C | |
Minimum Operating Temperature | - 40 C | |
Factory Pack QuantityFactory Pack Quantity | 15 | |
Mounting Styles | Press Fit | |
Part # Aliases | TDB6HK180N16RR SP005422504 | |
Manufacturer | Infineon | |
Brand | Infineon Technologies |
Свойство продукта | Значение свойства | |
---|---|---|
RoHS | Details | |
Series | - | |
Operating Temperature | 175°C (TJ) | |
Packaging | Tray | |
Type | Half Bridge Module | |
Subcategory | Discrete Semiconductor Modules | |
Technology | Si | |
Power Dissipation | 515 | |
Product Type | Discrete Semiconductor Modules | |
Voltage - Gate Trigger (Vgt) (Max) | 2 V | |
Current - Non Rep. Surge 50, 60Hz (Itsm) | 1600A @ 50Hz | |
Current - Gate Trigger (Igt) (Max) | 100 mA | |
Current - Hold (Ih) (Max) | 220 mA | |
Structure | Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode | |
Continuous Collector Current | 140 | |
Product | Thyristor Power Modules | |
Vf - Forward Voltage | 1.2 V | |
Product Category | Discrete Semiconductor Modules |