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BAR8802LRHE6327T Технические параметры

Infineon Technologies AG  BAR8802LRHE6327T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
Maximum Reverse Voltage (V) 80
Maximum Forward Current (mA) 100
Maximum Forward Voltage (V) 1.2
Maximum Series Resistance @ Maximum IF (Ohm) 0.8(Typ)@10mA
Maximum Series Resistance @ Minimum IF (Ohm) 2.5@1mA
Maximum Diode Capacitance (pF) 0.4@1V
Maximum Power Dissipation (mW) 250
Typical Carrier Life Time (us) 0.5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Standard Package Name TSLP
Supplier Package TSLP
Свойство продукта Значение свойства
Military No
Mounting Surface Mount
Package Height 0.35(Max)
Package Length 1
Package Width 0.6
PCB changed 2
Lead Shape No Lead
Packaging Tape and Reel
Part Status Obsolete
Type Switch
Pin Count 2
Configuration Single
Frequency Range UHF
RoHS Status RoHS Compliant
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BAR8802LRHE6327T Документы

BAR8802LRHE6327T brand manufacturers: Infineon Technologies AG, Anli stock, BAR8802LRHE6327T reference price.Infineon Technologies AG. BAR8802LRHE6327T parameters, BAR8802LRHE6327T Datasheet PDF and pin diagram description download.You can use the BAR8802LRHE6327T Diodes - RF, DSP Datesheet PDF, find BAR8802LRHE6327T pin diagram and circuit diagram and usage method of function,BAR8802LRHE6327T electronics tutorials.You can download from the Anli.