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BAS12507WE6327XT Технические параметры

Infineon Technologies AG  BAS12507WE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Mount Surface Mount
Number of Pins 4Pins
Material Si
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 25
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 0.5
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.15
Maximum Diode Capacitance (pF) 1.1
Maximum Power Dissipation (mW) 250
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Standard Package Name SOT-343
Supplier Package SOT-343
Свойство продукта Значение свойства
Military No
Mounting Surface Mount
Package Height 0.9(Max)
Package Length 2
Package Width 1.25
PCB changed 3
Tab Tab
Lead Shape Gull-wing
RoHS Compliant
Packaging Tape and Reel
Part Status Obsolete
Type Schottky Diode
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Pin Count 4
Configuration Dual Parallel
Forward Voltage 950 mV
Peak Non-Repetitive Surge Current 500 mA
RoHS Status RoHS Compliant

BAS12507WE6327XT Документы

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