ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

BAS170WE6327T Технические параметры

Infineon Technologies AG  BAS170WE6327T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Material Si
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 70
Maximum Continuous Forward Current (A) 0.07
Peak Non-Repetitive Surge Current (A) 0.1
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.1@50V
Maximum Diode Capacitance (pF) 2
Maximum Power Dissipation (mW) 250
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Свойство продукта Значение свойства
Standard Package Name SOD
Supplier Package SOD-323
Military No
Mounting Surface Mount
Package Height 1.05(Max)
Package Length 1.7
Package Width 1.25
PCB changed 2
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Unconfirmed
Type Schottky Diode
Pin Count 2
Configuration Single
RoHS Status RoHS Compliant

BAS170WE6327T Документы

BAS170WE6327T brand manufacturers: Infineon Technologies AG, Anli stock, BAS170WE6327T reference price.Infineon Technologies AG. BAS170WE6327T parameters, BAS170WE6327T Datasheet PDF and pin diagram description download.You can use the BAS170WE6327T Diodes - RF, DSP Datesheet PDF, find BAS170WE6327T pin diagram and circuit diagram and usage method of function,BAS170WE6327T electronics tutorials.You can download from the Anli.