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BAS 70-02W H6327 Технические параметры

Infineon Technologies AG  BAS 70-02W H6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Mounting Type Surface Mount
Package / Case SC-80
Supplier Device Package PG-SCD80-2
Material Si
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 70
Maximum Continuous Forward Current (A) 0.07
Peak Non-Repetitive Surge Current (A) 0.1
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.1@50V
Maximum Diode Capacitance (pF) 2
Maximum Power Dissipation (mW) 250
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Supplier Package SCD-80
Military No
Mounting Surface Mount
Package Height 0.7
Package Length 1.3
Свойство продукта Значение свойства
Package Width 0.8
PCB changed 2
Lead Shape Flat
Package Bulk
Mfr Infineon Technologies
Product Status Active
Packaging Tape and Reel
Series -
Part Status Obsolete
Type Schottky Diode
Pin Count 2
Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA
Operating Temperature - Junction 150°C
Voltage - DC Reverse (Vr) (Max) 70 V
Current - Average Rectified (Io) 70mA
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr) 100 ps
RoHS Status RoHS Compliant

BAS 70-02W H6327 Документы

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