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BAS7006WE6327XT Технические параметры

Infineon Technologies AG  BAS7006WE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Material Si
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 70
Maximum Continuous Forward Current (A) 0.07
Peak Non-Repetitive Surge Current (A) 0.1
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.1@50V
Maximum Diode Capacitance (pF) 2
Maximum Power Dissipation (mW) 250
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Temperature Grade Automotive
Automotive Yes
AEC Qualified Number AEC-Q101
Свойство продукта Значение свойства
Standard Package Name SOT-323
Supplier Package SOT-323
Military No
Mounting Surface Mount
Package Height 0.9(Max)
Package Length 2
Package Width 1.25
PCB changed 3
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type Schottky Diode
Pin Count 3
Configuration Dual Common Anode
RoHS Status RoHS Compliant

BAS7006WE6327XT Документы

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