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BAS70E6327T Технические параметры

Infineon Technologies AG  BAS70E6327T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Material Si
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 70
Maximum Continuous Forward Current (A) 0.07
Peak Non-Repetitive Surge Current (A) 0.1
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.1@50V
Maximum Diode Capacitance (pF) 2
Maximum Power Dissipation (mW) 250
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Temperature Grade Automotive
AEC Qualified Yes
Свойство продукта Значение свойства
AEC Qualified Number AEC-Q101
Standard Package Name SOT-23
Supplier Package SOT-23
Military No
Mounting Surface Mount
Package Height 1(Max)
Package Length 2.9
Package Width 1.3
PCB changed 3
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Active
Type Schottky Diode
Pin Count 3
Configuration Single
RoHS Status RoHS Compliant

BAS70E6327T Документы

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