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BAT 54W H6327 Технические параметры

Infineon Technologies AG  BAT 54W H6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package PG-SOT323-3
Material Si
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 30
Maximum Continuous Forward Current (A) 0.2
Peak Non-Repetitive Surge Current (A) 0.6
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 2@25V
Maximum Diode Capacitance (pF) 10
Maximum Power Dissipation (mW) 230
Peak Reverse Recovery Time (ns) 5
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Standard Package Name SOT-323
Supplier Package SOT-323
Military No
Mounting Surface Mount
Package Height 0.9(Max)
Свойство продукта Значение свойства
Package Length 2
Package Width 1.25
PCB changed 3
Lead Shape Gull-wing
Package Bulk
Base Product Number BAT54
Mfr Infineon Technologies
Product Status Active
Packaging Tape and Reel
Series -
Part Status Obsolete
Type Schottky Diode
Pin Count 3
Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA
Operating Temperature - Junction 150°C
Voltage - DC Reverse (Vr) (Max) 30 V
Current - Average Rectified (Io) 200mA
Capacitance @ Vr, F 10pF @ 1V, 1MHz
Reverse Recovery Time (trr) 5 ns
RoHS Status RoHS Compliant

BAT 54W H6327 Документы

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