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BAV70WH6433XT Технические параметры

Infineon Technologies AG  BAV70WH6433XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Material Si
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 80
Peak Reverse Repetitive Voltage (V) 85
Maximum Continuous Forward Current (A) 0.2
Peak Non-Repetitive Surge Current (A) 4.5
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.15@70V
Maximum Diode Capacitance (pF) 1.5
Maximum Power Dissipation (mW) 250
Peak Reverse Recovery Time (ns) 4
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Свойство продукта Значение свойства
AEC Qualified Number AEC-Q101
Standard Package Name SOT-323
Supplier Package SOT-323
Military No
Mounting Surface Mount
Package Height 0.9(Max)
Package Length 2
Package Width 1.25
PCB changed 3
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status LTB
Type Switching Diode
Pin Count 3
Configuration Dual Common Cathode
RoHS Status RoHS Compliant

BAV70WH6433XT Документы

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