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FZ800R12KF4NOSA1 Технические параметры

Infineon Technologies AG  FZ800R12KF4NOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
ECCN (US) EAR99
Maximum Collector-Emitter Voltage (V) 1200
Typical Collector Emitter Saturation Voltage (V) 2.7
Maximum Gate Emitter Voltage (V) ±20
Maximum Power Dissipation (mW) 5400000
Maximum Continuous Collector Current (A) 800
Maximum Gate Emitter Leakage Current (uA) 0.4
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125
Automotive No
Supplier Package IHM130-2
Свойство продукта Значение свойства
Military No
Mounting Screw
Package Height 38
Package Length 140
Package Width 130
PCB changed 7
Packaging Tray
Part Status Obsolete
Pin Count 7
Configuration Dual Common Emitter Common Gate
Channel Type N
RoHS Status RoHS non-compliant
Просмотр сходства

FZ800R12KF4NOSA1 Документы

FZ800R12KF4NOSA1 brand manufacturers: Infineon Technologies AG, Anli stock, FZ800R12KF4NOSA1 reference price.Infineon Technologies AG. FZ800R12KF4NOSA1 parameters, FZ800R12KF4NOSA1 Datasheet PDF and pin diagram description download.You can use the FZ800R12KF4NOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FZ800R12KF4NOSA1 pin diagram and circuit diagram and usage method of function,FZ800R12KF4NOSA1 electronics tutorials.You can download from the Anli.